A Unified Statistical Model for Inter-Die and Intra-Die Process Variation

@article{Doh2005AUS,
  title={A Unified Statistical Model for Inter-Die and Intra-Die Process Variation},
  author={Ji-Seong Doh and Dae-Wook Kim and Sang-Hoon Lee and Jong-Bae Lee and Young-Kwan Park and Moon-Hyun Yoo and Jeong-taek Kong},
  journal={2005 International Conference On Simulation of Semiconductor Processes and Devices},
  year={2005},
  pages={131-134}
}
An efficient characterization technique with the spatial correlation matrix from electrical device parameters such as threshold voltage and saturation current accounting for inter- and intra-die variations is demonstrated. Then, a unified statistical model based on the correlation matrix is developed and implemented to the SPICE simulator to predict the distribution of circuit performance. In order to verify our model, test chips which consist of transistors and ring oscillators were fabricated… CONTINUE READING
Highly Cited
This paper has 18 citations. REVIEW CITATIONS