A UVLO Circuit in SiC Compatible With Power MOSFET Integration

@article{Glover2014AUC,
  title={A UVLO Circuit in SiC Compatible With Power MOSFET Integration},
  author={Michael D. Glover and Paul D. Shepherd and A. Matt Francis and M. Mudholkar and Homer Alan Mantooth and Milton Nance Ericson and S. Shane Frank and Charles L. Britton and Laura Marlino and Ty R. McNutt and Adam Barkley and Bret Whitaker and Alexander B. Lostetter},
  journal={IEEE Journal of Emerging and Selected Topics in Power Electronics},
  year={2014},
  volume={2},
  pages={425-433}
}
The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between… CONTINUE READING
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