A “Thru-Short-Open” De-embedding Method for Accurate On-Wafer RF Measurements of Nano-Scale MOSFETs

Abstract

A new on-wafer de-embedding method using thru, short and open patterns sequentially is proposed to eliminate the errors of conventional methods. This “thru-short-open” method is based on the removal of the coupling admittance between input and output interconnect dangling legs. The increase of the de-embedding effect of the lossy coupling capacitance on the cutoff frequency in MOSFETs is observed as the gate length is scaled down to 45 nm. This method will be very useful for accurate RF measurements of nano-scale MOSFETs.

6 Figures and Tables

Cite this paper

@inproceedings{Kim2012AD, title={A “Thru-Short-Open” De-embedding Method for Accurate On-Wafer RF Measurements of Nano-Scale MOSFETs}, author={Ju-Young Kim and Min-Kwon Choi}, year={2012} }