A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor


A multigigahertz AlGaN/GaN resonant body transistor (RBT) is reported, wherein the mechanical resonance and electrical signal modulation are achieved simultaneously. A 175-Å-thick AlGaN layer is used as the piezoelectric transduction layer, and the 2-D electron gas present at the AlGaN/GaN interface is employed as the bottom electrode as well as the… (More)


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Citations per Year

Citation Velocity: 15

Averaging 15 citations per year over the last 3 years.

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