A Study of Gallium FIB induced Silicon Amorphization using TEM , APT and BCA Simulation

Crystalline silicon (c-Si) is partially amorphized in Focused Ion Beam (FIB) TEM lamella preparation. A 30kV Ga beam with a small glancing incident results in a 20-30nm amorphous layer [1, 2]. The precise mechanisms remain uncertain and a damage prediction can hardly be made. In this study, a Binary Collision Approximation (BCA) software is employed to… CONTINUE READING