A Study of Blocking and Tunnel Oxide Engineering on Double-Trapping (DT) BE-SONOS Performance


Double-trapping bandgap engineered SONOS (DT BE-SONOS) [1] was proposed to provide both fast erase speed and deep erase by means of a second nitride trapping layer and an additional blocking oxide on top of BE-SONOS. Although this provides excellent erase performance but the additional layers increase the EOT and subsequently the erase voltage, thus it is… (More)


11 Figures and Tables