A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects

@article{Nour2016ASP,
  title={A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects},
  author={Mohamed A. Nour and Zeynep Çelik-Butler and Arif Mohammad Sonnet and Fan-Chi Hou and Shaoping Tang and Guru Mathur},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={1428-1436}
}
Investigating random telegraph signals (RTS) observed in MOS devices is important for studying the gate-oxide defect characteristics and developing simulation and modeling tools in highly scaled devices. In this paper, we are presenting a comprehensive, variable-temperature, single-to-multitrap scalable RTS model and a simulation tool (RTSSIM) based on the first principles, and supported by experimental data. The physical and electrical characteristics of the actual oxide defects are considered… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 47 REFERENCES

Investigation of degradation in advanced analog MOS technologies

  • Md. I. Mahmud
  • Ph.D. dissertation, Dept. Elect. Eng., UTA…
  • 2013
Highly Influential
6 Excerpts

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