A SrRuO/sub 3//IrO/sub 2/ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and beyond

Abstract

An extremely damage-robust SrRuO/sub 3//IrO/sub 2/ top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO/sub 3//IrO/sub 2/ top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode… (More)

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Cite this paper

@article{Kumura2005AS3, title={A SrRuO/sub 3//IrO/sub 2/ top electrode FeRAM with Cu BEOL process for embedded memory of 130nm generation and beyond}, author={Yoshinori Kumura and Tsuneyuki Ozaki and Haruichi Kanaya and O. Hidaka and Yuichi Shimojo and Susumu Shuto and Yutaka Yamada and Kanji Tomioka and K. Yamakawa and Susumu Yamazaki and Daisaburo Takashima and Tetsuro Miyakawa and Shinichiro Shiratake and S. Ohtsuki and Iwao Kunishima and Akihiro Nitayama}, journal={Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.}, year={2005}, pages={557-560} }