A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

@article{ValdezSandoval2021ASD,
  title={A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications},
  author={Leslie M. Valdez-Sandoval and Eloy Ram{\'i}rez-Garc{\'i}a and Saungeun Park and Deji Akinwande and David Jim{\'e}nez and An{\'i}bal Pacheco-S{\'a}nchez},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2021},
  volume={31},
  pages={1055-1058}
}
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers are designed at 2.4 GHz using the experimentally calibrated small-signal BPFET EC. Results show high-gain high… 

Figures and Tables from this paper

References

SHOWING 1-10 OF 27 REFERENCES

The high-frequency analogue performance of MOSFETs

The high-frequency (HF) behaviour of MOSFETs from different CMOS processes has been characterised. Small-signal Y-parameters and derived quantities such as current, voltage and power gain have been

Black Phosphorous Thin-Film Transistor and RF Circuit Applications

In this letter, we discuss the design, fabrication, and high-frequency characterization of black phosphorous (BP)based field-effect transistors (FETs) and their circuit applications. We demonstrate

Black phosphorus radio-frequency transistors.

BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus can be considered as a promising candidate for the future high performance thin film electronics technology for operation in the multi-GHz frequency range and beyond.

Black Phosphorus MOSFET for Future-Generation Thin-Film Electronics Capable of Microwave Operation

With novel contact and gate dielectric, a top-gated black phosphorus MOSFET exhibited record performance with 19-GHz forward-current-gain cutoff frequency and 29-GHz maximum frequency of oscillation.

A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances

A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed considering the explicit contribution of effects at the metal–graphene interfaces by means of contact

Continuous-wave and transient characteristics of phosphorene microwave transistors

Few-layer phosphorene MOSFETs with 0.3-μm-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz

Small-signal parameters extraction and noise analysis of CNTFETs

The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a

A predictive model for high-frequency operation of two-dimensional transistors from first-principles

A compact device model for phosphorene-based transistor that takes into account its band structure anisotropy as well as the carrier inertia, which is crucial for high-frequency operation is developed and found that channel orientation has a strong impact on both the low and high frequency conductances.

Black Phosphorus High-Frequency Transistors with Local Contact Bias.

Top-gated submicron BP MOSFETs with local contact bias electrodes to induce doping in the contact region resulted in reduced contact resistance and orders-of-magnitude improvement in current capacity and peak transconductance, if compared with top- gated BP transistors without any back-gating scheme.

Assessment of High-Frequency Performance Limit of Black Phosphorus Field-Effect Transistors

The frequency limit of BP FETs is project based on rigorous atomistic quantum transport simulations and the small-signal circuit model and indicates that there still exists large room for optimization in fabrication, suggesting further advancement of high-frequency performance of state-of-the-art BP Fets for the future analog and radio-frequency applications.