CAST: an electrical stress test to monitor single bit failures in Flash-EEPROM structures
- P Cappelletti, R Bez, D Cantarelli, L. Ravazzi
- Microelectronics Reliability 1997;37;
We present a novel single poly-silicon EEPROM cell for embedded memory. The cell is integrated in a 0.13 m RF-CMOS technology without process modifications and is composed of an NMOS transistor and a MOS capacitor on two isolated P-wells sharing a floating poly-silicon layer. A two-polarity voltage of ± 6 V is applied for writing and erasing using uniform channel Fowler-Nordheim tunnelling. Operations faster than 1 ms, endurance over 10 +3 cycles and data retention longer than 10 years are demonstrated.