A Single-Poly EEPROM Cell for Embedded Memory Applications


We present a novel single poly-silicon EEPROM cell for embedded memory. The cell is integrated in a 0.13 m RF-CMOS technology without process modifications and is composed of an NMOS transistor and a MOS capacitor on two isolated P-wells sharing a floating poly-silicon layer. A two-polarity voltage of ± 6 V is applied for writing and erasing using uniform channel Fowler-Nordheim tunnelling. Operations faster than 1 ms, endurance over 10 +3 cycles and data retention longer than 10 years are demonstrated.

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@inproceedings{Bartolomeo2008ASE, title={A Single-Poly EEPROM Cell for Embedded Memory Applications}, author={Antonio Di Bartolomeo and Holger R{\"{u}cker and Peter Schley and Alison Fox and Stefan Lischke and Kee-Yeol Na}, year={2008} }