A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm

@article{Webster2012ASA,
  title={A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm},
  author={Eric A. G. Webster and Justin A. Richardson and L. A. Grant and David Renshaw and R. K. Henderson},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={694-696}
}
A CMOS and back-side illumination-compatible single-photon avalanche diode (SPAD) is reported in 90-nm imaging technology with a peak photon detection efficiency of ≈ 44% at 690 nm and better than ≈20% at 850 nm. This represents an approximately eightfold improvement in near infrared sensitivity over existing CMOS SPADs. This result has important implications for optical communications, time-of-flight ranging, and optical tomography applications. The 6.4-μm-diameter SPAD also achieves the… CONTINUE READING
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