A Simulation Study of the Switching Times of 22- and 17-nm Gate-Length SOI nFETs on High Mobility Substrates and Si

  • S. E. Laux
  • Published 2007 in IEEE Transactions on Electron Devices

Abstract

The switching times of ultrathin body semiconductor-on-insulator n-channel field-effect transistors with 22- and 17-nm gate lengths are simulated, and the results obtained for four high mobility substrates (Ge, GaAs, InP, and In0.53Ga0.47As) are compared to Si. Both intrinsic and extrinsic device structures are simulated, and a detailed accounting of device… (More)

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