A Simulation Study of Enhancement-Mode AlGaN / GaN HEMTs with Recessed

Abstract

The properties of GaN and AlN and their heterostructures have encouraged the research of AlGaN/GaN based transistors for various applications in the last decade. Consequently, outstanding results have been reported for depletion-mode high electron mobility transistors (DHEMT) in recent years. However, for several applications (both analog and digital… (More)

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