A Simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

@article{Kang2010ASC,
  title={A Simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device},
  author={Myounggon Kang and Wookghee Hahn and Il Han Park and Hocheol Lee and Juyoung Park and Youngsun Song and Changgyu Eun and Sanghyun Ju and Kihwan Choi and Youngho Lim and Jong-Ho Lee and Byung-Gook Park and Hyungcheol Shin},
  journal={2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)},
  year={2010},
  pages={1-4}
}
In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory… CONTINUE READING