A Silicon Single-Electron Transistor Memory Operating at Room Temperature

@article{Guo1997ASS,
  title={A Silicon Single-Electron Transistor Memory Operating at Room Temperature},
  author={C Guo and Leobandung and C F Chou},
  journal={Science},
  year={1997},
  volume={275 5300},
  pages={649-51}
}
A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating… CONTINUE READING
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Instabilities in MOS Devices (Gorden and Breach

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