A SiGe Ka-band cryogenic low-noise amplifier

@article{Wong2016ASK,
  title={A SiGe Ka-band cryogenic low-noise amplifier},
  author={Wei-Ting Wong and Prasana Ravindran and Su-Wei Chang and Joseph C. ChangBardin},
  journal={2016 IEEE MTT-S International Microwave Symposium (IMS)},
  year={2016},
  pages={1-3}
}
The design and characterization of a cryogenic silicon germanium integrated circuit amplifier operating at a center frequency of 22 GHz is presented. The packaged amplifier is measured at 15 K and achieves a gain of 25 dB and a noise temperature below 35 K, which is consistent with simulated performance. It is believed that this is the first reporting of a cryogenic silicon germanium low-noise amplifier operating above 10GHz and that the measured results represent the lowest reported noise… CONTINUE READING

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