A SPICE-compatible model of Graphene Nano-Ribbon Field-Effect Transistors enabling circuit-level delay and power analysis under process variation

@article{Chen2013ASM,
  title={A SPICE-compatible model of Graphene Nano-Ribbon Field-Effect Transistors enabling circuit-level delay and power analysis under process variation},
  author={Ying-Yu Chen and Artem Rogachev and Amit Sangai and Giuseppe Iannaccone and Gianluca Fiori and Deming Chen},
  journal={2013 Design, Automation & Test in Europe Conference & Exhibition (DATE)},
  year={2013},
  pages={1789-1794}
}
This paper presents the first parameterized, SPICE-compatible compact model of a Graphene Nano-Ribbon Field-Effect Transistor (GNRFET) with doped reservoirs that also supports process variation. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, edge roughness, and doping level in the reservoir are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process… CONTINUE READING
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