A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

@article{Guan2012ASC,
  title={A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations},
  author={Ximeng Guan and Shimeng Yu and H S Philip Wong},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={1405-1407}
}
A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells. 
Highly Cited
This paper has 92 citations. REVIEW CITATIONS

From This Paper

Figures, tables, and topics from this paper.
60 Citations
12 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 60 extracted citations

93 Citations

0102030'13'14'15'16'17'18
Citations per Year
Semantic Scholar estimates that this publication has 93 citations based on the available data.

See our FAQ for additional information.

References

Publications referenced by this paper.
Showing 1-10 of 12 references

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory,

  • S. Yu, Y. Wu, H.-S.P. Wong
  • Appl. Phys. Lett., vol. 98,
  • 2011
Highly Influential
13 Excerpts

Ngspice User’s Manual

  • P. Nenzi, H. Vogt
  • Berkeley, CA: Univ. California, May 1
  • 2012
1 Excerpt

On the variability of HfOx RRAM : From numerical simulation to compact modeling

  • S. Yu, H.-S. P. Wong
  • Proc . Workshop Compact Models
  • 2012

S

  • X. Guan
  • Yu, and H.-S. P. Wong, “On the variability of…
  • 2012
2 Excerpts

and C

  • W. Liu, X. Jin, +10 authors P. K. Ko
  • Hu, BSIM3V3.3 MOSFET Model User’s Manual…
  • 2005

Similar Papers

Loading similar papers…