A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

  title={A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations},
  author={Ximeng Guan and Shimeng Yu and H S Philip Wong},
  journal={IEEE Electron Device Letters},
A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells. 
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