A Robust 10T SRAM Cell with Enhanced Read Operation


This paper presents a new 10T SRAM cell that has enhanced read speed along with good read and write stability. While the read access time of the proposed cell is 0.72x and 0.83x smaller as compared to the two most popular 10T SRAM cells at 500C; the read SNM is 1.16x and 1.05x higher compared to existing 10T cells. Though the read-write power of the… (More)