A Rigorous Model for Through-Silicon Vias With Ohmic Contact in Silicon Interposer


High-density through-silicon via (TSV) interconnects in silicon interposer require effective crosstalk-reduction signaling schemes and rigorous crosstalk modeling techniques. In this letter, we propose a rigorous model for grounded TSVs with ohmic contact. The proposed model takes into account contact resistance, doping density, and doping-region… (More)


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Citations per Year

Citation Velocity: 7

Averaging 7 citations per year over the last 3 years.

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