A Quasi-Analytical Model for Energy-Delay-Reliability Tradeoff Studies During Write Operations in a Perpendicular STT-RAM Cell

@article{Munira2012AQM,
  title={A Quasi-Analytical Model for Energy-Delay-Reliability Tradeoff Studies During Write Operations in a Perpendicular STT-RAM Cell},
  author={Kamaram Munira and William H. Butler and Avik W. Ghosh},
  journal={IEEE Transactions on Electron Devices},
  year={2012},
  volume={59},
  pages={2221-2226}
}
One of the biggest challenges that the current spin-transfer-torque-based random access memory (STT-RAM) industry faces is maintaining high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics-based analytical model that uses a modified Simmons tunneling expression to capture the spin-dependent tunneling in a magnetic tunnel junction (MTJ). Coupled with an analytical derivation of the critical switching current based on the… 

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