A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors

This paper presents a quantitative analysis of the errors produced by the Matthiessen rule in the extraction of the inversion-layer mobility in metal-oxide-semiconductor transistors. We show that the Matthiessen rule results in large inaccuracies in the mobility extraction, and most of all, it can lead to wrong trends, namely, to an incorrect dependence of… (More)