A Predictive Model for the Chemical Vapor Deposition of Polysilicon in a Cold Wall, Rapid Thermal System

@inproceedings{Toprac1994APM,
  title={A Predictive Model for the Chemical Vapor Deposition of Polysilicon in a Cold Wall, Rapid Thermal System},
  author={Anthony J. Toprac and Isaac Trachtenberg and Thomas F. Edgar},
  year={1994}
}
The chemical vapor deposition of polysilicon from thermally activated silane in a cold wall, single-wafer rapid thermal system was studied by experimentation at a variety of low pressure conditions, including very high temperatures. The effect of diluent gas on polysilicon deposition rates was examined using hydrogen, helium, and krypton. A mass-transfer model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system was developed. This model was used to produce an… CONTINUE READING

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