A Polycrystalline Silicon Thin-Film Transistor With Self-Aligned Metal Electrodes Formed Using Aluminum-Induced Crystallization

Abstract

A low-temperature technology for the fabrication of a polycrystalline silicon (poly-Si) thin-film transistor (TFT) with self-aligned metal electrodes (SAMEs) is demonstrated. The conventional poly-Si source and drain regions are amorphized by self-aligned dopant implantation before they are replaced by aluminum via an aluminum-induced crystallization (AIC… (More)

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Cite this paper

@article{Zhang2008APS, title={A Polycrystalline Silicon Thin-Film Transistor With Self-Aligned Metal Electrodes Formed Using Aluminum-Induced Crystallization}, author={Dongli Zhang and Tzu-Hao Chow and Man Wong}, journal={IEEE Transactions on Electron Devices}, year={2008}, volume={55}, pages={2181-2186} }