A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors

@article{Keiter2010APD,
  title={A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors},
  author={Eric R. Keiter and Thomas V. Russo and Charles E. Hembree and Kenneth E. Kambour},
  journal={IEEE Transactions on Nuclear Science},
  year={2010},
  volume={57},
  pages={3305-3313}
}
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented and implemented in the Xyce circuit simulator, and is shown to agree well with… 
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