## Analysis of drain bias dependence of 1/f noise in HV-MOSFETs

- Nikolaos Mavredakis, Walter Pflanzl, Ehrenfried Seebacher, Thomas Gneiting, Matthias Bucher
- 2015 International Conference on Noise and…
- 2015

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@article{Mahmud2013APA, title={A Physics-Based Analytical \$\hbox\{1\}/f\$ Noise Model for RESURF LDMOS Transistors}, author={Md. Iqbal Mahmud and Zeynep Çelik-Butler and Pinghai Hao and Purushothaman Srinivasan and Fan-Chi Hou and Xu Cheng and Benjamin Amey and Sameer Pendharkar}, journal={IEEE Transactions on Electron Devices}, year={2013}, volume={60}, pages={677-683} }

- Published 2013 in IEEE Transactions on Electron Devices

A physics-based model has been implemented to describe the low-frequency noise behavior in differently processed reduced-surface-field lateral double-diffused MOS devices. The developed model is based upon the correlated carrier number and the mobility fluctuation theory known as the unified model but has been modified to account for the fluctuations in the extended drain and the channel. Unlike the unified 1/f noise model, nonuniform trap distribution has been taken into account with respect… CONTINUE READING

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