A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

@article{Vandelli2011APM,
  title={A Physical Model of the Temperature Dependence of the Current Through \$\hbox\{SiO\}_\{2\}\hbox\{/\}\hbox\{HfO\}_\{2\}\$ Stacks},
  author={Luca Vandelli and Andrea Padovani and Luca Larcher and R. G. Southwick and W. B. Knowlton and Gennadi Bersuker},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={2878-2887}
}
In this paper, we investigate the characteristics of the defects responsible for the leakage current in the SiO2 and SiO2/HfO2 gate dielectric stacks in a wide temperature range (6 K-400 K). We simulated the temperature dependence of the I -V characteristics both at positive and negative gate voltages by applying the multiphonon trap-assisted tunneling model describing the charge transport through the dielectric. In the depletion/weak inversion regime, the current is limited by the supply of… CONTINUE READING
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