A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method


The correlation between the set time (t<sub>set</sub>) and the initial off-state resistance (R<sub>OFF</sub>) statistics for a Ti/ZrO<sub>2</sub>/Pt bipolar resistive random access memory device was investigated. The width-adjusting pulse operation method, which can significantly improve the switching uniformity, was used to accurately measure t<sub>set… (More)


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