A Physical Model for Mosfet Output Resistance

@inproceedings{Liu2004APM,
  title={A Physical Model for Mosfet Output Resistance},
  author={Z. H. Liu},
  year={2004}
}
The output resistance (Roul) is one of the most impor tant device parameters for analog applications. How ever, it has been difficult to model Rou, correctly. In this paper, we present a physical and accurate output resis tance model that can be applied to both long-channel and submicrometer MOSFETs. Major short channel effects and hot-carrier effect, such as channel-length modulation (CLM) [1],drain-induced-barrier-lowering (DIBL) [2] [6] [7] and substrate current induced output resistance re… CONTINUE READING
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Nanoscale insulated shallow extension MOSFET with Dual Material Gate for high performance analog operations

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