A Passive W-Band Imager in 65nm Bulk CMOS

@article{Tomkins2009APW,
  title={A Passive W-Band Imager in 65nm Bulk CMOS},
  author={Alexander Tomkins and Patrice Garcia and S. P. Voinigescu},
  journal={2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium},
  year={2009},
  pages={1-4}
}
A passive imager operating in the W-band around 90GHz has been realized in a digital 65nm CMOS process. The imager, occupying only 0.41mm, integrates an SPDT switch with 4.2dB loss and 25dB isolation, a 5-stage telescopic cascode LNA with 27dB gain at 90GHz, and a W-band square-law detector, all consuming less than 33mA from 1.2V. The imager, when measured without the input SPDT, has a peak responsivity of over 200kV/W, and a minimum NEP of less than 0.1pW/√Hz. With the input switch, it… CONTINUE READING
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