A NovelResistance MemorywithHighScalability andNanosecond Switching

@inproceedings{Aratani2007ANM,
  title={A NovelResistance MemorywithHighScalability andNanosecond Switching},
  author={Katsuhisa Aratani and Kazuhiro Ohba and Tetsuya Mizuguchi and Shuichiro Yasuda and Tsunenori Shiimoto and Tomohito Tsushima and Takeyuki Sone and Katsuyoshi Endo and Akira Kouchiyama and Satoshi Sasaki and Akihiro Maesaka and Naomi Yamada},
  year={2007}
}
resulting inrelatively lowdatathroughput. Ontheother hand, another typeofthenewmemories basedonasolid state We report anovelnonvolatile dual-layered electrolytic electrolyte [5], inwhichionssuchasAg+orCu+movealong resistance memorycomposedofa conductive Cu ion theapplied field andformtheconductive bridge inthe activated layer andathininsulator forthefirst time. An electrolyte, isapromising candidate fromtheviewpoints of ON/OFFmechanism ofthis newtypememoryispostulated highspeedswitching… CONTINUE READING