A Novel methodology for dopant contrast enhancement in Si Doped Area

@article{Zhu2009ANM,
  title={A Novel methodology for dopant contrast enhancement in Si Doped Area},
  author={Zhu Zhu and Jinyu Tong and Lai Li Lung and Ki-te Li and S. J. Chang},
  journal={2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits},
  year={2009},
  pages={414-417}
}
As well known, it is quite difficult to obtain dopant related information by SEM due to weak built-in potentials especially in Si. In this paper, utilize doped poly to enhance dopant contrast (DC) and shows successfully DC in doped Si area, and the model is also proposed for phenomenon explanation.