A Novel Tri-Control Gate Surrounding Gate Transistor (TCG-SGT) Flash Memory Cell

@article{Ohba2005ANT,
  title={A Novel Tri-Control Gate Surrounding Gate Transistor (TCG-SGT) Flash Memory Cell},
  author={Takuya Ohba and Harukazu Nakamura and Hiroshi Sakuraba and F. Masouka},
  journal={2005 International Semiconductor Device Research Symposium},
  year={2005},
  pages={48-49}
}
In this paper, the authors have proposed the novel TCG-SGT flash memory cell. In addition, the authors have derived the capacitive-coupling ratio and, through process simulation, have proposed a fabrication process for the device. It is obvious that the TCG-SGT memory cell produces a coupling ratio that is exceptionally higher than conventional flash memory… CONTINUE READING