A Novel Silicon Photovoltaic Cell Using a Low-Temperature Quasi-Epitaxial Silicon Emitter

Abstract

A new silicon solar cell fabricated using a low-temperature process is demonstrated with a highly conductive (n+) quasi-epitaxial (qEpi-Si) silicon emitter deposited on silicon substrates, without using transparent conductive oxides. The emitter was formed by a plasma-enhanced chemical vapor deposition process on granular multicrystalline silicon (mc-Si… (More)

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Cite this paper

@article{FarrokhBaroughi2007ANS, title={A Novel Silicon Photovoltaic Cell Using a Low-Temperature Quasi-Epitaxial Silicon Emitter}, author={Mahdi Farrokh-Baroughi and Siva Sivoththaman}, journal={IEEE Electron Device Letters}, year={2007}, volume={28}, pages={575-577} }