A Novel Short-Channel Model for Threshold Voltage of Trigate MOSFETs With Localized Trapped Charges

@article{Chiang2012ANS,
  title={A Novel Short-Channel Model for Threshold Voltage of Trigate MOSFETs With Localized Trapped Charges},
  author={Te-Kuang Chiang},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2012},
  volume={12},
  pages={311-316}
}
  • Te-Kuang Chiang
  • Published 2012 in
    IEEE Transactions on Device and Materials…
Based on the scaling equation and perimeter-weighted-sum approach, a novel short-channel threshold voltage model for the trigate (TG) MOSFETs with localized interface trapped charges is developed by considering the effects of equivalent oxide charges on the flatband voltage. The model shows how the positive/negative trapped charges, silicon thickness, silicon width, oxide thickness, and normalized damaged zone affect the threshold voltage behavior. The model is verified by the 3-D device… CONTINUE READING

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