A Novel Read Scheme for Read Disturbance Suppression in 3D NAND Flash Memory

@article{Zhang2017ANR,
  title={A Novel Read Scheme for Read Disturbance Suppression in 3D NAND Flash Memory},
  author={Yue Zhang and Lei Jin and DanDan Jiang and Xingqi Zou and Hongtao Liu and Zongliang Huo},
  journal={IEEE Electron Device Letters},
  year={2017},
  volume={38},
  pages={1669-1672}
}
A new read scheme is proposed to suppress read disturbance in unselected strings of three-dimensional (3D) vertical channel flash memories. This new scheme decreases the channel potential difference between select word-line (WL) and adjacent WL by more than 20% and the read disturb due to hot carrier injection in adjacent WL of selected WL is suppressed… CONTINUE READING