A Novel Polysilicon Thin-Film Transistor with Multi-Trenched Body for Suppressing Off-State Leakage

Abstract

In this paper, the polysilicon thin-film transistor with multi-trenched body is fabricated and investigated that manifests off-state leakage suppression without degrading on-state current and other electric performances. The reason is that the leakage path can be separated by the multi-trenched body and the carrier scattering through the polysilicon grain… (More)

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