A Novel Low-Temperature Polysilicon Thin-Film Transistors With a Self-Aligned Gate and Raised Source/Drain Formed by the Damascene Process

@article{Chang2007ANL,
  title={A Novel Low-Temperature Polysilicon Thin-Film Transistors With a Self-Aligned Gate and Raised Source/Drain Formed by the Damascene Process},
  author={K. M. Chang and Gin Min Lin and Guo Liang Yang},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={806-808}
}
In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the damascene process has been developed and investigated. Comparing with the conventional coplanar TFT, the proposed RSD TFT has a remarkable lower off-state current (177 to 6.29 nA), and the on/off… CONTINUE READING