A Novel Double HBT-Based Capacitorless 1T DRAM Cell With Si/SiGe Heterojunctions


We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation… (More)


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