A Novel Bonding Method for Ionic Wafers

@article{Howlader2007ANB,
  title={A Novel Bonding Method for Ionic Wafers},
  author={M M R Howlader and Tadatomo Suga and M. J. Kim},
  journal={IEEE Transactions on Advanced Packaging},
  year={2007},
  volume={30},
  pages={598-604}
}
A novel method for bonding sapphire, quartz, and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and simultaneously coated with nano-adhesion Fe layers using a low energy argon ion beam. The optical images show that the entire area of the 4-in wafers of LiNbO3/Si was bonded. Such images for other samples show particle induced voids across the interface. The average tensile strength for all of the… CONTINUE READING