A Nonvolatile Sense Amplifier Flip-Flop Using Programmable Metallization Cells

@article{Mahalanabis2015ANS,
  title={A Nonvolatile Sense Amplifier Flip-Flop Using Programmable Metallization Cells},
  author={Debayan Mahalanabis and Vineeth Bharadwaj and Hugh J. Barnaby and Sarma B. K. Vrudhula and Michael N. Kozicki},
  journal={IEEE Journal on Emerging and Selected Topics in Circuits and Systems},
  year={2015},
  volume={5},
  pages={205-213}
}
In this work, a zero-leakage nonvolatile flip-flop architecture based on a differential CMOS sense-amplifier flip-flop is presented. The flip-flop stores data in complimentarily programmed resistive memory devices during inactive period while power supply is turned off and then restores the data to flip-flop outputs once power supply is turned back on. The resistive memory technology considered here are known as programmable metallization cell (PMC) that switches via metal ion transport within… CONTINUE READING

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