A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT

@article{Inoue2006AND,
  title={A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT},
  author={Akira Inoue and Hirotaka Amasuga and Shougo Goto and Tetsuo Kunii and M. R. Wong and Jes{\'u}s A Del Alamo and Tomoki Oku and Takahide Ishikawa},
  journal={2006 IEEE MTT-S International Microwave Symposium Digest},
  year={2006},
  pages={647-650}
}
A millimeter wave high power PHEMT model with a nonlinear drain resistance Rd is proposed. The nonlinear Rd arises from electron velocity saturation in the gate-drain gap. At 2.1 GHz, the nonlinear Rd behaves like a conventional linear resistor. However, at Ka band, the nonlinearity of the resistance results in a large power loss. This frequency dependent phenomenon has been experimentally verified in millimeter-wave GaAs PHEMTs. Our proposed simple model accurately describes the power… CONTINUE READING

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References

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SHOWING 1-6 OF 6 REFERENCES

Impact of Drain Recess Length on the RF Power Performance of GaAs PHEMTs

  • M. F. Wong, J. A. del Alamo, A. Inoue, T. Hisaka, K. Hayashi
  • 6th Topical Workshop on Heterostructure…
  • 2005
3 Excerpts

Extension of Chalmers Nonlinear HEMT and MESFET Model

  • I.Angelov, L.Bengtsson, M.Garcia
  • IEEE Trans. Microwave Theory Tech., Vol.44, No.10…
  • 1996
1 Excerpt

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