A New Two-Dimensional Silicon Oxidation Model


This paper describes a new two-dimensional silicon oxidation model taking into consideration the deformation of silicon. In the model based on the steady-state oxidant diffusion and viscoelastic deformation of the oxide, it is assumed that the oxide is composed of two layers during the deformation of the oxide. Simulated results on a LOCOS structure were… (More)
DOI: 10.1109/TCAD.1987.1270286