A New Threshold Voltage Model for Short-Channel Junctionless Inverted T-Shaped Gate FETs (JLITFET)


On the basis of the quasi-three-dimensional scaling equation, equivalent number of gates, and minimum bottom-central potential, a novel threshold voltage model for the short-channel junctionless inverted T-shaped gate FETs (JLITFET) is presented. It is shown that the thin thickness of the inverted T-shaped silicon base (ITSB) is superior to the thick one in… (More)


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