A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates

@article{Lin2015ANS,
  title={A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates},
  author={Zhi Lin and Xing Bi Chen},
  journal={IEEE Electron Device Letters},
  year={2015},
  volume={36},
  pages={588-590}
}
A new solution based on the concept of a deep drain diffusion combined with field plates (FPs) is proposed for the superjunction lateral double diffused MOSFET (SJ-LDMOS) device. The deep drain diffusion suppresses the curvature effect of the conventional SJ-LDMOS and the FPs optimize the electric field distribution further. Simulated results show that the proposed SJ-LDMOS exhibits figure of merits of 12.8 and 8.5 MW/cm2 for 700 and 1200 V ratings, respectively, which are about 20% better than… CONTINUE READING