A New Semiconductor Tetrode-The Surface-Potential Controlled Transistor

@article{Sah1961ANS,
  title={A New Semiconductor Tetrode-The Surface-Potential Controlled Transistor},
  author={Chih-tang Sah},
  journal={Proceedings of the IRE},
  year={1961},
  volume={49},
  pages={1623-1634}
}
The theory and operating characteristics of a new semiconductor tetrode is discussed in this paper. This semiconductor junction device has the usual geometry of the planar transistor, but with an additional metal electrode placed on the oxide which covers the surface of the emitter-base junction. This electrode serves as a grid. The grid-base voltage controls the surface potential, surface recombination rate and the size of the surface channel, and thereby the current gain of the transistor. In… CONTINUE READING

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