A New Read-Disturb Failure Mechanism Caused by Boosting Hot-Carrier Injection Effect in MLC NAND Flash Memory

Abstract

In this paper, we have reported a new failure phenomenon of read-disturb in MLC NAND flash memory caused by boosting hot-carrier injection effect. 1) The read-disturb failure occurred on unselected WL (WLn+1) after the adjacent selected WL (WLn) was performed with more than 1K read cycles. 2) The read-disturb failure of WLn+1 depends on WLn cell’s Vth and… (More)

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@article{Wang2009ANR, title={A New Read-Disturb Failure Mechanism Caused by Boosting Hot-Carrier Injection Effect in MLC NAND Flash Memory}, author={Hsin-Heng Wang and Pei-Shan Shieh and Chiu-Tsung Huang and Kenji Tokami and Ricky Kuo and S. S. Chen and Houng-Chi Wei and Saysamone Pittikoun and Seiichi Aritome}, journal={2009 IEEE International Memory Workshop}, year={2009}, pages={1-2} }