A New Impedance Technique to Extract Mobility and Sheet Carrier Concentration in HFET’s and MESFET’s

Abstract

Conventional techniques to extract channel mobility, , and sheet carrier concentration, nS , in heterostructure fieldeffect transistors (HFET’s) do not account for the distributed nature of the device. This can result in substantial errors. To address this, we have developed a new technique that consists of measuring the gate-to-source impedance with the… (More)

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Cite this paper

@inproceedings{Ernst1998ANI, title={A New Impedance Technique to Extract Mobility and Sheet Carrier Concentration in HFET’s and MESFET’s}, author={Alexander Ernst and Mark H. Somerville and Jes{\'u}s A. del Alamo}, year={1998} }