A New Empirical Nonlinear Model for HEMT and MESFET Devices

A new large signal model for HEMT’s and MESFET’s, capable of ,modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances is described. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including… CONTINUE READING