A New Drain-Current Injection Technique for the Measurement of Off-State Breakdown Voltage in FET ’ s

@inproceedings{AND,
  title={A New Drain-Current Injection Technique for the Measurement of Off-State Breakdown Voltage in FET ’ s},
  author={}
}
    Presence of deep-level states may have serious effects in the performance of devices based on diamond. For example, in the case of p-n junction devices, the reverse leakage current, the switching speed, and on-state conduction characteristics are dependent on the lifetimes of the carriers, which in turn are controlled by the position , density, and capture cross sections of the traps. Also, deep-level impurities lead to compensation effects, resulting in changes in the background resistivity… CONTINUE READING

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    References

    Publications referenced by this paper.
    Showing 1-10 of 16 references

    Modeling and experimental study of breakdown mechanisms in multichannel AIGaAs / GaAs power HEMT ’ s

    T. Mimura M. Fukuta, H. Suzuki, K. Suyama
    Microwave Opt . Technol . Lett . • 1990

    Depletion - and enhancement - mode AI , , , In , szAs / Ga , , 471 no S 3 A ~ modulation - doped field - effect transistors with a recessed gate structure , ” in Inst

    T. Itoh, A. S. Brown, +3 authors L. F. Eastman
    1989

    New pseudomorphic n - / n + GaAs / InGaAs / GaAs power HEMT with high breakdown voltages

    T. Sonoda, S. Sakamoto, +3 authors Y. Kashimoto
    1988

    Breakdown walk - out in AlGaAs / GaAs HEMT ’ s

    M. Shur P. C. Chao, M. Y. Kao, B. R. Lee
    IEEE Trans . Electron Devices • 1985

    Improvement of the drain breakdown voltage of GaAs power MESFET ’ s by a simple recess structure

    Y. Crosnier Temcamani, D. Lippens, G. Salmer
    IEEE Trans . Electron Devices • 1978

    4 - GHz 15W power GaAs MESFET

    P. H. Ladbroke
    IEEE Trans . Electron Devices